Comment on "Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb" [Appl. Phys. Lett. 75, 2954 (1999)]

Evans, P. G.; Evans, P.G.; Dubon, O. D.; Dubon, O.D.; Chervinsky, J. F.; Chervinsky, J.F.; Spaepen, F.; Golovchenko, J. A.; Golovchenko, J.A.
October 2000
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
Academic Journal
Presents corrections to errors in the article 'Low-temperature on high-miscut Si(111) mediated by thin overlayers of Pb,' by L.-C. Wei and C.-s. Su. Growth of high quality silicon (Si) films on viscinal Si; Misinterpretation of ion channeling spectra; Use of too thin samples for the adequate determination of minimum yield from measured spectra.


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