TITLE

Optical and microstructural studies of InGaN/GaN quantum dot ensembles

AUTHOR(S)
Davies, S. C.; Mowbray, D. J.; Ranalli, F.; Parbrook, P. J.; Wang, Q.; Wang, T.; Yea, B. S.; Sherliker, B. J.; Halsall, M. P.; Kashtiban, R. J.; Bangert, U.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p111903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An optical and structural study of InGaN/GaN quantum dots (QDs) is reported. With increasing InGaN deposition time, the dominant emission changes from wetting layer (WL) to QDs, and a strong redshift of the emission occurs. Emission from localized WL states is observed, with a density and nature very different to that due to the QDs. Structural measurements reveal a disordered WL, consistent with the form of the WL photoluminescence excitation spectra.
ACCESSION #
44292321

 

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