Thermal stability of epitaxial Fe films on GaN(0001)

Cunxu Gao; Brandt, Oliver; Schönherr, Hans-Peter; Jahn, Uwe; Herfort, Jens; Jenichen, Bernd
September 2009
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p111906
Academic Journal
Epitaxial Fe films are grown on GaN(0001) by molecular beam epitaxy at 50 °C. Several samples of one Fe/GaN structure are subjected to rapid thermal annealing from 300 to 950 °C. Using a variety of experimental techniques, we examine the impact of this annealing step upon the morphological, structural, and magnetic properties of these samples. The results demonstrate that the material system Fe/GaN is thermally stable up to a temperature of 700 °C.


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