Thermal stability of epitaxial Fe films on GaN(0001)

Cunxu Gao; Brandt, Oliver; Schönherr, Hans-Peter; Jahn, Uwe; Herfort, Jens; Jenichen, Bernd
September 2009
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p111906
Academic Journal
Epitaxial Fe films are grown on GaN(0001) by molecular beam epitaxy at 50 °C. Several samples of one Fe/GaN structure are subjected to rapid thermal annealing from 300 to 950 °C. Using a variety of experimental techniques, we examine the impact of this annealing step upon the morphological, structural, and magnetic properties of these samples. The results demonstrate that the material system Fe/GaN is thermally stable up to a temperature of 700 °C.


Related Articles

  • Annealing condition optimization and electrical characterization of amorphous LaAlO3/GaAs metal-oxide-semiconductor capacitors. Choi, Donghun; Harris, James S.; Warusawithana, Maitri; Schlom, Darrell G. // Applied Physics Letters;6/11/2007, Vol. 90 Issue 24, p243505 

    The electrical properties of amorphous LaAlO3/GaAs metal-oxide-semiconductor capacitors fabricated using molecular-beam deposition are investigated. The surface was protected during sample transfer between III-V and oxide molecular beam epitaxy chambers by a thick arsenic-capping layer....

  • Pulsed laser annealing of Be-implanted GaN. Wang, H. T.; Tan, L. S.; Chor, E. F. // Journal of Applied Physics;11/1/2005, Vol. 98 Issue 9, p094901 

    Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved...

  • Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures. Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C. // Journal of Applied Physics;9/1/2007, Vol. 102 Issue 5, p054302 

    Self-assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on n+-GaAs substrates, capped between 0.4 μm thick n-type GaAs layers with electron concentration of 1×1016 cm-3. The effect of rapid thermal annealing at 700 °C for 60 s on the noise properties of the...

  • Identification of an isolated arsenic antisite defect in GaAsBi. Dagnelund, D.; Puustinen, J.; Guina, M.; Chen, W. M.; Buyanova, I. A. // Applied Physics Letters;2/3/2014, Vol. 104 Issue 5, p052110-1 

    Optically detected magnetic resonance and photoluminescence spectroscopy are employed to study grown-in defects in GaAs0.985Bi0.015 epilayers grown by molecular beam epitaxy. The dominant paramagnetic defect is identified as an isolated arsenic antisite, AsGa, with an electron g-factor of 2.03...

  • Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing. Casiraghi, A.; Rushforth, A. W.; Wang, M.; Farley, N. R. S.; Wadley, P.; Hall, J. L.; Staddon, C. R.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L. // Applied Physics Letters;9/20/2010, Vol. 97 Issue 12, p122504 

    We have investigated the effects of postgrowth low temperature annealing on the magnetic, electrical, and structural properties of (Ga0.94Mn0.06)(As0.9P0.1) layers grown by molecular beam epitaxy. By controlling the annealing time, we are able to tune the magnetic anisotropy between an easy axis...

  • Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy. Jamer, Michelle E.; Sterbinsky, George E.; Stephen, Gregory M.; DeCapua, Matthew C.; Player, Gabriel; Heiman, Don // Applied Physics Letters;10/31//2016, Vol. 109 Issue 18, p182402-1 

    Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure; however, many of these compounds have been found to phase segregate. In this study,...

  • Rapid thermal oxidation of GeSi strained layers. Nayak, D.; Kamjoo, K.; Woo, J. C. S.; Park, J. S.; Wang, K. L. // Applied Physics Letters;1/1/1990, Vol. 56 Issue 1, p66 

    The experimental results of the rapid thermal oxidation in the initial oxidation regime of molecular beam epitaxy grown GeSi strained layers are reported. It is shown that the dry oxidation rate of GeSi is the same as that of Si at different temperatures. After a very short initial time...

  • Defect-state generation in Czochralski-grown (100) silicon rapidly annealed with incoherent light. Barbier, D.; Remram, M.; Joly, J. F.; Laugier, A. // Journal of Applied Physics;1/1/1987, Vol. 61 Issue 1, p156 

    Focuses on the defect-state generation in unimplanted silicon after rapid thermal annealing (RTA) as a function of the annealing parameters. Description and features of RTA; Importance of accurate temperature measurements and control in understanding and fundamental studies of material...

  • Spectroscopic Ellipsometry Analysis of Rapid Thermal Annealing Effect on MBE Grown GaAs1-xNx. Sedrine, Nebiha Ben; Rihani, Jaouher; Harmand, Jean-Christophe; Chtourou, Radhouane // Journal of Telecommunications & Information Technology;2009, Vol. 2009 Issue 1, p51 

    We report on the effect of rapid thermal annealing (RTA) on GaAs1-x Nx layers, grown by molecular beam epitaxy (MBE), using room temperature spectroscopic ellipsometry (SE). A comparative study was carried out on a set of GaAs1-x Nx as-grown and the RTA samples with small nitrogen content (x =...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics