Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy

Wei Yi; Narayanamurti, Venkatesh; Hong Lu; Scarpulla, Michael A.; Gossard, Arthur C.; Yong Huang; Jae-Hyun Ryou; Dupuis, Russell D.
September 2009
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p112102
Academic Journal
Utilizing ambipolar tunnel emission of ballistic electrons and holes, we have developed a model-independent method to self-consistently measure bandgaps of semiconductors and band offsets at semiconductor heterojunctions. Lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)0.51In0.49P (100) single-barrier heterostructures are studied at 4.2 K. For the GaAs/AlGaAs interface, the measured Γ band offset ratio is 60.4:39.6 (±2%). For the heteroanion GaAs/AlGaInP (100) interface, this ratio varies with the Al composition and is distributed more in the valence band. The indirect-gap X band offsets observed at the GaAs/AlGaInP interface deviates from predictions by the transitivity rule.


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