Engineering double-shifted hysteresis loops in Co/IrMn/Cu/Co films

Cichelero, R.; Pereira, L. G.; Dias, T.; Schmidt, J. E.; Deranlot, C.; Petroff, F.; Geshev, J.
September 2009
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p112501
Academic Journal
Co(3 nm)/IrMn(15 nm)/Cu(dCu)/Co(7 nm) films were subjected to magnetic annealing where its temperature and duration as well as the direction and amplitude of the applied field were varied. We demonstrate that the exchange-bias field magnitude and sign of the subloop of the bottom-pinned Co layer can be tailored in a controlled manner allowing the whole hysteresis loop to be tuned from a double negatively/negatively shifted to a double negatively/positively shifted with the shifts of the subloops in antiphase.


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