TITLE

Toward full carbon interconnects: High conductivity of individual carbon nanotube to carbon nanotube regrowth junctions

AUTHOR(S)
Tuukkanen, S.; Streiff, S.; Chenevier, P.; Pinault, M.; Jeong, H.-J.; Enouz-Vedrenne, S.; Cojocaru, C. S.; Pribat, D.; Bourgoin, J.-P.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p113108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A versatile chemical vapor deposition (CVD) based method for the fabrication and electrical measurement of individual carbon nanotube junctions was developed. ferritin or Fe particles were grafted on multiwalled carbon nanotubes (MWNTs) and used as catalysts for the subsequent growth of secondary MWNT by CVD. Junctions were then individually connected. The conductivities of the MWNTs and of the junction were measured. Statistical data show that the conductance of the MWNT-MWNT junction is similar to that of MWNT. This result paves the way for the use of carbon nanotubes as electrical interconnects in electronic applications.
ACCESSION #
44292302

 

Related Articles

  • Bottom-up approach for carbon nanotube interconnects. Li, Jun; Ye, Qi; Cassell, Alan; Ng, Hou Tee; Stevens, Ramsey; Han, Jie; Meyyappan, M. // Applied Physics Letters;4/14/2003, Vol. 82 Issue 15, p2491 

    We report a bottom-up approach to integrate multiwalled carbon nanotubes (MWNTs) into multilevel interconnects in silicon integrated-circuit manufacturing. MWNTs are grown vertically from patterned catalyst spots using plasma-enhanced chemical vapor deposition. We demonstrate the capability to...

  • Torsion-contact technology adds new twist to electrical connectivity. Fjelstad, Joseph; Yasumura, Gary // Connector Specifier;Oct/Nov2006, Vol. 22 Issue 7, p14 

    The article discusses the torsion-contact in the electrical interconnection technology. Electrical interconnection includes all different structures and technologies used to guide an electronic signal from one component or circuit element to another in an electronic system. Torsion is the...

  • Three new links will multiply Britain's electrical ties to Europe.  // Modern Power Systems;May2016, Vol. 36 Issue 5, p41 

    The article discusses the three prospective electricity interconnectors that link Great Britain to mainland Europe. These include the ElecLink that connects France via the Channel Tunnel and has received approval from French Conseil d'Etat, the sub-marine interconnector France-Alderney-Britain,...

  • Carbon nanotube interconnects "grow" to meet future IC needs. Coffey, Valerie // Connector Specifier;Jun2004, Vol. 20 Issue 6, p1 

    Reports on the planarization by chemical mechanical polishing (CMP) method to connect multiwalled carbon nanotubes into multilevel integrated circuits revealed by researchers at the U.S. National Aeronautics and Space Administration (NASA) Ames Research Center in Moffett Field, California as of...

  • Towards the integration of carbon nanotubes in microelectronics. Graham, A. P.; Duesberg, G. S.; Kreupl, F.; Seidel, R.; Liebau, M.; Unger, E.; Hönlein, W. // AIP Conference Proceedings;2003, Vol. 685 Issue 1, p587 

    The outstanding properties of carbon nanotubes (CNTs) makes them particularly interesting for microelectronic applications such as interconnects and devices. The parallel integration of CNTs using compatible processes is critical for their future application and implies the simultaneous...

  • Size effect on the electron wind force for electromigration at the top metal-dielectric interface in nanoscale interconnects. Wu, Zhuo-Jie; Ho, Paul S. // Applied Physics Letters;9/3/2012, Vol. 101 Issue 10, p101601 

    We report a classical model on the size effect of the electron wind force on a metal atom at the metal-dielectric interface in nanoscale interconnects. The effect is expressed as a size factor S for the effective charge Z*e. It is found that the size factor decreases with scaling due to reduced...

  • NEW HIGH DENSITY RF INTERCONNECT SYSTEM. Tutt, Christopher // Microwave Journal;Mar2009 Cables & Connectors, p6 

    The article features the development of a new high density RF interconnect (HDRFI) system with the application of an elastomer interface. It has the capacity to increase the connection density in order to receive more data or signals in and out without creating any changes in the existing...

  • MIPI Alliance and USB 3.0 Promoter Group Announce Availability of SuperSpeed USB Inter-Chip Specification.  // Telecom Standards;Jul2012, Vol. 22 Issue 7, p8 

    The article presents information on the company MIPI Alliance and USB 3.0 Promoter Group who has announced the availability of specification for a technological innovation for USB called SuperSpeed USB Inter-Chip (SSIC). It informs that the specification defines power a chip-to-chip USB based...

  • Molecular design of ultralow-k insulator materials. ZAGORODNIY, K.; HERMANN, H.; TAUT, M. // Materials Science (0137-1339);2007, Vol. 25 Issue 4, p1203 

    Dielectric materials with low permittivity (low k) are required for insulation to reduce the interconnect RC-delay in deep submicron integrated circuits. Combinations of classical and quantum-theoretical approaches for the assessment of the dielectric propertias of fullerene-based materials with...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics