TITLE

Mesoscopic phenomena in Au nanocrystal floating gate memory structure

AUTHOR(S)
Chan, K. C.; Lee, P. F.; Dai, J. Y.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p113109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A resonant tunneling process is demonstrated in the HfAlO/Au nanocrystals/HfAlO trilayer nonvolatile memory (NVM) structure on Si, where the electrons tunnel back and forth to the Au nanocrystals due to the various mesoscopic behaviors. The electron tunneling behavior in this trilayer structure exhibits dissimilar resemblance to those in double-barrier tunnel junctions taking into account of the correlation of Coulomb blockade effect. The observed specific tunneling process is beneficial in studying the interplays of various mesoscopic physics and application of single electron devices into NVM.
ACCESSION #
44292301

 

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