Fabrication of single electron transistors using transfer-printed aligned single walled carbon nanotubes arrays

Tabata, Hiroshi; Shimizu, Maki; Ishibashi, Koji
September 2009
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p113107
Academic Journal
A technique has been developed to transfer the aligned single-walled carbon nanotubes (SWCNTs) grown on a single-crystal quarz substrate to a SiO2/Si substrate. Aligned single electron transistors (SETs) have been fabricated with the transferred SWCNTs, and the low-temperature transport measurements have been carried out at 1.5 K. Several SETs fabricated in this approach exhibited regular Coulomb oscillations and closed Coulomb diamonds, which indicate the single quantum dot behavior. This suggests that the mechanical transfer technique does not produce serious damage to the SETs and would be useful for future integrated SET devices and circuits.


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