TITLE

Erbium-doped GaN optical amplifiers operating at 1.54 μm

AUTHOR(S)
Dahal, R.; Ugolini, C.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p111109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Strip optical waveguides based on erbium (Er)-doped AlGaN/GaN:Er/AlGaN heterostructures have been fabricated and characterized in the optical communication wavelength window near 1.54 μm. The propagation loss of these waveguide amplifiers have been measured at 1.54 μm and found to be 3.5 cm-1. Moreover, the optical amplification properties of the waveguides were measured using a signal input at 1.54 μm and a broadband GaN light-emitting diode at 365 nm as pump source. A relative signal enhancement of ∼8 cm-1 was observed. The implications of such devices in photonic integrated circuits for optical communications are discussed.
ACCESSION #
44292291

 

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