Force modulation of tunnel gaps in metal oxide memristive nanoswitches

Feng Miao; Yang, J. Joshua; Strachan, John Paul; Stewart, Duncan; Williams, R. Stanley; Chun Ning Lau
September 2009
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p113503
Academic Journal
Electron tunneling plays a key role in computing devices. Tunneling is, however, notoriously difficult to characterize inside real device structures. Using pressure modulated conductance microscopy, we demonstrate in situ angstrom-scale tuning and estimation of tunnel gaps with ∼10 nm lateral resolution. By modulating tunnel gaps in Pt/TiOx/Pt memristive oxide nanoswitches, we establish that these devices switch via 2–9 Å modification of the tunnel gap.


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