Transmission electron microscopy investigation of inversion domain boundary in Al0.65Ga0.35N grown on AlN/sapphire template

Sang, L. W.; Fang, H.; Qin, Z. X.; Wang, X. Q.; Shen, B.; Yang, Z. J.; Zhang, G. Y.; Zhang, X. P.; You, L. P.; Yu, D. P.
September 2009
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p112106
Academic Journal
A kind of inversion domains (IDs) which originated from the tips of threading dislocations were observed in the Al0.65Ga0.35N layer by transmission electron microscopy (TEM). The IDs showed columnar structures with diameters of 10–20 nm. We find that the dislocations evolved into V-shape boundaries then form IDs. By high resolution TEM analysis, the atomic structure at the boundary was proved to be the IDB* structure, in which each atom remains fourfold coordinated without the formation of Ga–Ga or N–N bonds.


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