TITLE

Pumping properties of the hybrid single-electron transistor in dissipative environment

AUTHOR(S)
Lotkhov, S. V.; Kemppinen, A.; Kafanov, S.; Pekola, J. P.; Zorin, A. B.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p112507
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.
ACCESSION #
44292265

 

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