Pumping properties of the hybrid single-electron transistor in dissipative environment

Lotkhov, S. V.; Kemppinen, A.; Kafanov, S.; Pekola, J. P.; Zorin, A. B.
September 2009
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p112507
Academic Journal
Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.


Related Articles

  • Electron scattering at high momentum transfer from methane: Analysis of line shapes. Vos, Maarten // Journal of Chemical Physics;2/21/2010, Vol. 132 Issue 7, p074306 

    The measurement of the energy distribution of keV electrons backscattered elastically from molecules reveals one or more peaks. These peaks are at nonzero energy loss and have an intrinsic width. The usual interpretation of these measurements is attractively simple and assumes billiard-ball-type...

  • Melting of ultrathin lubricant film due to dissipative heating of friction surfaces. Khomenko, A.; Lyashenko, I. // Technical Physics;Sep2007, Vol. 52 Issue 9, p1239 

    Melting of an ultrathin lubricant film during friction between atomically smooth surfaces is studied. Additive noise of shear stress and strain as well as of film temperature is introduced and the phase diagram is constructed. On the diagram, the noise intensity for this temperature and the...

  • Unified treatment of quantum coherent and incoherent hopping dynamics in electronic energy transfer: Reduced hierarchy equation approach. Ishizaki, Akihito; Fleming, Graham R. // Journal of Chemical Physics;6/21/2009, Vol. 130 Issue 23, p234111 

    A new quantum dynamic equation for excitation energy transfer is developed which can describe quantum coherent wavelike motion and incoherent hopping in a unified manner. The developed equation reduces to the conventional Redfield theory and Förster theory in their respective limits of...

  • Coherent current states in a two-band superconductor. Yerin, Y. S.; Omelyanchouk, A. N. // Low Temperature Physics;May2007, Vol. 33 Issue 5, p401 

    Homogeneous current states in thin films and Josephson current in superconducting microbridges are studied within the framework of a two-band Ginzburg–Landau theory. By solving the coupled system of equations for two order parameters the depairing current curves and Josephson...

  • Force modulation of tunnel gaps in metal oxide memristive nanoswitches. Feng Miao; Yang, J. Joshua; Strachan, John Paul; Stewart, Duncan; Williams, R. Stanley; Chun Ning Lau // Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p113503 

    Electron tunneling plays a key role in computing devices. Tunneling is, however, notoriously difficult to characterize inside real device structures. Using pressure modulated conductance microscopy, we demonstrate in situ angstrom-scale tuning and estimation of tunnel gaps with ∼10 nm...

  • Observing electron tunneling in real time. B. P. S. // Physics Today;Jun2007, Vol. 60 Issue 6, p27 

    This article describes observing electron tunneling in real time. To escape an atom, an electron usually has to gain enough energy to climb out of the atom's Coulomb well. However, if the atom is bathed in an intense laser pulse, the pulse's strong electric field can lower the confining...

  • Theory of the Bloch oscillating transistor. Hassel, J.; Seppä, H. // Journal of Applied Physics;1/15/2005, Vol. 97 Issue 2, p023904 

    The Bloch oscillating transistor (BOT) is a device in which single electron current through a normal tunnel junction enhances Cooper pair current in a mesoscopic Josephson junction, leading to signal amplification. In this article we develop a theory in which the BOT dynamics is described as a...

  • Reflectionless tunneling in planar Nb/GaAs hybrid junctions. Giazotto, Francesco; Cecchini, Marco; Pingue, Pasqualantonio; Beltram, Fabio; Lazzarino, Marco; Orani, Daniela; Rubini, Silvia; Franciosi, Alfonso // Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1772 

    Reflectionless tunneling was observed in Nb/GaAs superconductor/semiconductor junctions fabricated by a two-step procedure. First, periodic δ-doped layers were grown by molecular-beam epitaxy near the GaAs surface, followed by an As cap layer to protect the surface during ex situ transfer....

  • Electron tunneling into superconducting filaments using mechanically adjustable barriers. Moreland, John; Ekin, J. W. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p175 

    A new type of squeezable electron tunneling (SET) junction has been developed for tunneling into superconducting filaments. Stable, mechanically adjustable tunneling barriers between the native surfaces of sputtered Nb films and 30-µm-diam Nb filaments were established in liquid helium at 4...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics