Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide

Palmieri, R.; Radtke, C.; Boudinov, H.; da Silva Jr., E. F.
September 2009
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p113504
Academic Journal
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrates has been investigated. In comparison to conventional oxide growth using H2O, we found that the interface trap density is reduced close to the conduction band edge of 4H-SiC. This electrical improvement is correlated with the decrease in SiCxOy compounds at the SiO2/4H-SiC interface region as confirmed by two independent methods. These results point to the use of H2O2 as an alternative passivating agent of SiO2/4H-SiC interface electrically active defects.


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