TITLE

Phosphonic acid self-assembled monolayer and amorphous hafnium oxide hybrid dielectric for high performance polymer thin film transistors on plastic substrates

AUTHOR(S)
Acton, Orb; Osaka, Itaru; Guy Ting; Hutchins, Daniel; Hong Ma; McCullough, Richard D.; Jen, Alex K.-Y.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p113305
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A vacuum-free solution processed hybrid dielectric composed of an n-octadecyl-phosphonic acid self-assembled monolayer on amorphous sol-gel processed hafnium oxide (HfOx) is demonstrated for low-voltage polymer semiconductor-based thin film transistors (TFTs). The phosphonic acid/HfOx hybrid dielectric provides high capacitance (0.41 μF/cm2), low leakage current (5×10-8 A/cm2), and is compatible with plastic substrates. The utility of this dielectric is demonstrated by fabricating high performance polymer TFTs based on a spin coated thiophene-thiazolothiazole copolymer with operating voltages under -2 V, negligible hysteresis, subthreshold slopes as low as 100 mV/dec, and hole mobilities up to 0.11 cm2 V s.
ACCESSION #
44292254

 

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