The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory

Seung Wook Ryu; Jong Ho Lee; Young Bae Ahn; Choon Hwan Kim; Bong Seob Yang; Gun Hwan Kim; Soo Gil Kim; Se-Ho Lee; Cheol Seong Hwang; Hyeong Joon Kim
September 2009
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p112110
Academic Journal
This study examined the threshold switching voltage (VT) of 150 nm thick SiO2 doped Ge2Sb2Te5 (SGST) films for phase change random access memory applications. The VT of the SGST films increased from ∼0.9 V (for GST) to ∼1.5 V with increasing SiO2 content. The optical band gap and Urbach edge of the SGST films were similar regardless of the SiO2 concentration. The dielectric constant decreased by ∼37% and the electrical resistivity increased by ∼19%. The increase in VT of SGST films is associated with an effective increase in electric field and the decreased generation rate caused by impact ionization.


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