TITLE

Thermal nitridation passivation dependent band offset and electrical properties of AlOxNy/GaAs gate stacks

AUTHOR(S)
He, G.; Zhang, L. D.; Liu, M.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p112905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fermi level pinning attributed to oxides at the GaAs/high-k interface is a major obstacle to develop GaAs-based metal-oxide-semiconductor devices with high performance. In this letter, thermal nitridation treatment of GaAs surface prior to the high-k deposition is proposed to solve the issue of interface pinning. Results have confirmed that nitridation passivation effectively suppresses the oxides formation and leads to a shift in the Fermi level toward the conduction band minimum on the GaAs surface, which increases the conduction band offset at the GaAs/AlOxNy interface, followed by a saturated accumulation capacitance with reduced gate leakage current.
ACCESSION #
44292243

 

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