TITLE

Reduced contact resistances in organic transistors with secondary gates on source and drain electrodes

AUTHOR(S)
Nakayama, K.; Uemura, T.; Uno, M.; Takeya, J.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p113308
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Secondary-gate electrodes under source and drain electrodes are introduced in organic thin-film transistors to reduce carrier-injection barriers into air-stable organic semiconductors. The additional gate electrodes buried in the gate insulators form “carrier-rich regions” in the vicinity of the source and drain electrodes with the application of sufficiently high local electric fields. Fabricating the structure with dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, known for its excellent air stability, the contact resistance is drastically reduced especially at low gate voltages in the main channel. The result demonstrates carrier injection from the same material realizing a minimized potential barrier in the absence of interfacial trap levels for metal-to-semiconductor junctions.
ACCESSION #
44292239

 

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