TITLE

Field-modulated thermopower in SrTiO3-based field-effect transistors with amorphous 12CaO·7Al2O3 glass gate insulator

AUTHOR(S)
Ohta, Hiromichi; Masuoka, Yumi; Asahi, Ryoji; Kato, Takeharu; Ikuhara, Yuichi; Nomura, Kenji; Hosono, Hideo
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p113505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report transistor characteristics and field-modulated thermopower (S) for single crystal SrTiO3-based field-effect transistors (FETs). We use 150-nm-thick amorphous 12CaO·7Al2O3 glass as the gate insulator of the SrTiO3-FET. The resulting SrTiO3-FET exhibits excellent transistor characteristics at room temperature: on-to-off current ratio greater than 106, threshold gate voltage of +1.1 V, subthreshold swing of approximately 0.3 V decade-1, and effective mobility of 2 cm2 V-1 s-1. The field-modulated S-value of the SrTiO3-FET varied from -900 to -580 μV K-1 with electric fields of up to 2 MV cm-1, demonstrating the effectiveness of the FET structure for the exploration of thermoelectric materials.
ACCESSION #
44292237

 

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