TITLE

Self-organized vertically aligned single-crystal silicon nanostructures with controlled shape and aspect ratio by reactive plasma etching

AUTHOR(S)
Xu, S.; Levchenko, I.; Huang, S. Y.; Ostrikov, K.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/14/2009, Vol. 95 Issue 11, p111505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The formation of vertically aligned single-crystalline silicon nanostructures via “self-organized” maskless etching in Ar+H2 plasmas is studied. The shape and aspect ratio can be effectively controlled by the reactive plasma composition. In the optimum parameter space, single-crystalline pyramid-like nanostructures are produced; otherwise, nanocones and nanodots are formed. This generic nanostructure formation approach does not involve any external material deposition. It is based on a concurrent sputtering, etching, hydrogen termination, and atom/radical redeposition and can be applied to other nanomaterials.
ACCESSION #
44292230

 

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