Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

Ashrafi, A. B. M. Almamun; Ueta, Akio; Avramescu, Adrian; Kumano, Hidekazu; Suemune, Ikuo; Ok, Young-Woo; Seong, Tae-Yeon
January 2000
Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p550
Academic Journal
A stable wurtzite phase of ZnO is commonly observed. In this letter, we report the growth and characterization of zinc-blende ZnO on GaAs(001) substrates. The ZnO films grown on GaAs(001) substrates using microwave-plasma-assisted metalorganic molecular-beam epitaxy were characterized by reflection high-energy electron diffraction, x-ray diffraction, transmission electron microscope, and atomic force microscope measurements. The use of a ZnS buffer layer was found to lead to the growth of the zinc-blende ZnO films. Although the zinc-blende ZnO films were polycrystalline with columnar structures, they showed bright band-edge luminescence at room temperature. © 2000 American Institute of Physics.


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