TITLE

Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

AUTHOR(S)
Ashrafi, A. B. M. Almamun; Ueta, Akio; Avramescu, Adrian; Kumano, Hidekazu; Suemune, Ikuo; Ok, Young-Woo; Seong, Tae-Yeon
PUB. DATE
January 2000
SOURCE
Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p550
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A stable wurtzite phase of ZnO is commonly observed. In this letter, we report the growth and characterization of zinc-blende ZnO on GaAs(001) substrates. The ZnO films grown on GaAs(001) substrates using microwave-plasma-assisted metalorganic molecular-beam epitaxy were characterized by reflection high-energy electron diffraction, x-ray diffraction, transmission electron microscope, and atomic force microscope measurements. The use of a ZnS buffer layer was found to lead to the growth of the zinc-blende ZnO films. Although the zinc-blende ZnO films were polycrystalline with columnar structures, they showed bright band-edge luminescence at room temperature. © 2000 American Institute of Physics.
ACCESSION #
4415352

 

Related Articles

  • Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition. Ryu, Y.R.; Zhu, S. // Journal of Applied Physics;7/1/2000, Vol. 88 Issue 1, p201 

    Studies the optical and structural properties of zinc oxide (ZnO) films deposited on gallium arsenide (GaAs) by pulse laser deposition. Pressure of the ambient oxygen gas for ZnO film growth; Usability of ZnO films on GaAs substrates for optical devices such as light-emitting diodes.

  • Efficiency Improvements of GaAs-based Solar Cells by Hydrothermally-deposited ZnO Nanostructure Array. Chun-Yuan Huang; Chiao-Yang Cheng; Chun-Yem Huang; Yan-Kuin Su; Hin-Lung Fang, James // World Academy of Science, Engineering & Technology;Jul2011, Issue 55, p1009 

    ZnO nanostructures including nanowires, nanorods, and nanoneedles were successfully deposited on GaAs substrates, respectively, by simple two-step chemical method for the first time. A ZnO seed layer was firstly pre-coated on the O2-plasma treated substrate by sol-gel process, followed by the...

  • Surface acoustic wave properties of ZnO films on {001}-cut <110>-propagating GaAs substrates. Kim, Yoonkee; Hunt, William D.; Hickernell, Frederick S.; Higgins, Robert J. // Journal of Applied Physics;6/1/1994, Vol. 75 Issue 11, p7299 

    Presents a study which measured the surface acoustic wave properties of both radio frequency magnetron and direct current triode-sputtered zinc oxide films on propagating gallium arsenide. Comparison of the results with theoretical calculations; Growth of polycrystalline zinc oxide films;...

  • High-performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator. Kim, J. B.; Fuentes-Hernandez, C.; Kippelen, B. // Applied Physics Letters;12/15/2008, Vol. 93 Issue 24, p242111 

    We report on high-performance n-channel thin-film transistors (TFTs) fabricated using amorphous indium gallium zinc oxide (a-IGZO) and amorphous Ba0.5Sr0.5TiO3 (a-BST) as the channel and gate dielectric layers, respectively. a-BST/a-IGZO TFTs achieve low-voltage operation with a high saturation...

  • A transient electron transport analysis of bulk wurtzite zinc oxide. Hadi, Walid A.; Shur, Michael S.; O'Leary, Stephen K. // Journal of Applied Physics;Aug2012, Vol. 112 Issue 3, p033720 

    A three-valley Monte Carlo simulation approach is used in order to probe the transient electron transport that occurs within bulk wurtzite zinc oxide. For the purposes of this analysis, we follow O'Leary et al. [Solid State Commun. 150, 2182 (2010)], and study how electrons, initially in thermal...

  • Pulsed laser deposition of uniform semiconductor nanodot arrays. Gupta, Manisha; Sauer, Vincent; Tsui, Ying // Applied Physics A: Materials Science & Processing;Mar2013, Vol. 110 Issue 4, p817 

    Uniform arrays of silicon (Si), gallium arsenide (GaAs) and zinc oxide (ZnO) nanodots have been deposited using Pulsed Laser Deposition (PLD) technique combined with a contact mask consisting of nano-holes fabricated by E-beam lithography (EBL). These nanocrystalline semiconductor nanodots have...

  • Electrical Characteristics and Photoresponse of ZnO/ZnTe Heterojunction Diodes. WANG, W.; LIN, A.; PHILLIPS, J. D. // Journal of Electronic Materials;Aug2008, Vol. 37 Issue 8, p1044 

    Heterojunction diodes consisting of n-type ZnO and p-type ZnTe were grown by pulsed laser deposition and molecular beam epitaxy, respectively, on GaAs (001) substrates. Strong diode rectifying behavior was observed in the current- voltage characteristics with a current on/off ratio of Jon/Joff =...

  • Visual-infrared electroluminescence emission from ZnO/GaAs heterojunctions grown by metal-organic chemical vapor deposition. Du, Guotong; Cui, Yongguo; Xiaochuan, Xia; Li, Xiangping; Zhu, Huichao; Zhang, Baolin; Zhang, Yuantao; Ma, Yan // Applied Physics Letters;6/11/2007, Vol. 90 Issue 24, p243504 

    The light-emitting diode of p-ZnO/n-GaAs heterojunction was grown by metal-organic chemical vapor deposition. The p-ZnO films have been formed by the doping As atoms which diffuse into ZnO film from GaAs substrate. The p-type behavior of As-doped ZnO films based on As-doped p-ZnO/n-GaAs,...

  • Spin polarized tunneling in a ferromagnetic Zener diode. Comesaña, E.; Gehring, G. A. // Applied Physics Letters;10/1/2007, Vol. 91 Issue 14, p142510 

    Calculations of the tunneling current as a function of voltage for a Zener diode where both sides are ferromagnetic have been performed. The current is evaluated as a function of the voltage and of the magnetization on each side of the diode. The tunneling magnetoresistance is analyzed. Two...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics