Selective regrowth of Al[sub 0.30]Ga[sub 0.70]N p-i-n photodiodes

Collins, C. J.; Collins, C.J.; Li, T.; Lambert, D. J. H.; Lambert, D.J.H.; Wong, M. M.; Wong, M.M.; Dupuis, R. D.; Dupuis, R.D.; Campbell, J. C.; Campbell, J.C.
October 2000
Applied Physics Letters;10/30/2000, Vol. 77 Issue 18
Academic Journal
We report on the device performance of selective-area regrown Al[sub 0.30]Ga[sub 0.70]N p-i-n photodiodes. Tensile strain, induced by the lattice mismatch between Al[sub x]Ga[sub 1-x]N and GaN, leads to cracking above the critical thickness in layers with high aluminum concentration. Selective-area regrown devices with ≤70 μm diameters were fabricated without signs of cracking. These devices show low dark current densities with flat photoresponse and a forward turn-on current of ∼25 A/cm2 at 7 V. A quantum efficiency greater than 20% was achieved at zero bias with a peak wavelength of λ=315 nm. A differential resistance of R[sub 0]=3.46x10[sup 14] Ω and a detectivity of D[sup *]=4.85x10[sup 13] cm Hz[sup 1/2] W[sup -1] was demonstrated. © 2000 American Institute of Physics.


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