TITLE

Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition

AUTHOR(S)
Huang, H. Y.; Huang, H.Y.; Lin, W. C.; Lin, W.C.; Lee, W. H.; Lee, W.H.; Shu, C. K.; Shu, C.K.; Liao, K. C.; Liao, K.C.; Chen, W. K.; Chen, W.K.; Lee, M. C.; Lee, M.C.; Chen, W. H.; Chen, W.H.; Lee, Y. Y.; Lee, Y.Y.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/30/2000, Vol. 77 Issue 18
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied the As doping effects on the optical characteristics of GaN films by time-integrated photoluminescence and time-resolved photoluminescence. When As is incorporated into the film, the localized defect levels and donor-acceptor pair transition become less resolved. The recombination lifetime of neutral-donor-bound exciton (I[sub 2]) transition in undoped GaN increases with temperature as T[sup 1.5]. However, the I[sub 2] recombination lifetime in As-doped GaN first decreases exponentially from 98 to 41 ps between 12 and 75 K, then increases gradually to 72 ps at 250 K. Such a difference is related to the isoelectronic As impurities in GaN, which generate nearby shallow levels that dominate the recombination process. © 2000 American Institute of Physics.
ACCESSION #
4415303

 

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