In[sub x]Ga[sub 1-x]N light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off

Wong, W. S.; Wong, W.S.; Sands, T.; Cheung, N. W.; Cheung, N.W.; Kneissl, M.; Bour, D. P.; Mei, P.; Romano, L. T.; Johnson, N. M.
October 2000
Applied Physics Letters;10/30/2000, Vol. 77 Issue 18
Academic Journal
Indium-gallium nitride (In[sub x]Ga[sub 1-x]N) single-quantum-well (SQW) light emitting diodes (LEDs), grown by metalorganic chemical vapor deposition on sapphire, were transferred onto Si substrates. The thin-film In[sub x]Ga[sub 1-x]N SQW LED structures were first bonded onto a n[sup +]-Si substrate using a transient-liquid-phase Pd-In wafer-bonding process followed by a laser lift-off technique to remove the sapphire growth substrate. Individual, 250x250 μm[sup 2], LEDs with a backside contact through the n[sup +]-Si substrate were then fabricated. The LEDs had a typical turn-on voltage of 2.5 V and a forward current of 100 mA at 5.4 V. The room-temperature emission peak for the In[sub x]Ga[sub 1-x]N SQW LEDs was centered at 455 nm with a full width at half maximum of 19 nm. © 2000 American Institute of Physics.


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