Direct observation of stacking fault nucleation in the early stage of ZnSe/GaAs pseudomorphic epitaxial layer growth

Wang, N.; Fung, K. K.; Fung, K.K.; Sou, I. K.; Sou, I.K.
October 2000
Applied Physics Letters;10/30/2000, Vol. 77 Issue 18
Academic Journal
The nucleation of stacking faults in the initial stage of growth of ZnSe/GaAs(001) epilayers has been studied by high-resolution transmission electron microscopy. Stacking faults have been observed to nucleate on the {111} planes on the slopes of ZnSe islands and hang over the adjacent (001) surface. The image details of a V-shaped fault originating from a sharp tip at a later stage of growth is in good agreement with the simulated image of stacking faults emerging from a dimer array of three chains. This gives support to residual dimer array on the 2x1 reconstructed (001) surface as the origin of stacking faults in ZnSe epilayers. © 2000 American Institute of Physics.


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