Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaN[sub x]As[sub 1-x]

Yu, K. M.; Yu, K.M.; Walukiewicz, W.; Shan, W.; Wu, J.; Ager, J. W.; Ager III, J.W.; Haller, E. E.; Haller, E.E.; Geisz, J. F.; Geisz, J.F.; Ridgway, M. C.; Ridgway, M.C.
October 2000
Applied Physics Letters;10/30/2000, Vol. 77 Issue 18
Academic Journal
We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaN[sub x]As[sub 1-x] thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6x10[sup 18] cm[sup -3] for implanted S concentration higher than 10[sup 19] cm[sup -3], about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model. © 2000 American Institute of Physics.


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