Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells

Hegeler, F.; Manasreh, M. O.; Manasreh, M.O.; Morath, C.; Ballet, P.; Yang, H.; Salamo, G. J.; Salamo, G.J.; Tan, H. H.; Tan, H.H.; Jagadish, Chennupati
October 2000
Applied Physics Letters;10/30/2000, Vol. 77 Issue 18
Academic Journal
Intersubband transitions in 1 MeV proton-irradiated GaAs/AlGaAs multiple quantum wells were studied using an optical absorption technique and isochronal thermal annealing. The intersubband transitions were completely depleted in samples irradiated with doses as low as 4x10[sup 14] cm[sup -2]. More than 80% recovery of these depleted transitions was achieved after the samples were thermally annealed at temperatures less than 650 °C. The total integrated areas and peak position energies of the intersubband transitions in irradiated and unirradiated samples were monitored as a function of annealing temperature. It was noted that the recovery of the depleted intersubband transitions in irradiated samples depend on the irradiation dose and thermal annealing temperature. © 2000 American Institute of Physics.


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