TITLE

Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells

AUTHOR(S)
Polimeni, A.; Capizzi, M.; Geddo, M.; Fischer, M.; Reinhardt, M.; Forchel, A.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/30/2000, Vol. 77 Issue 18
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In[sub x]Ga[sub 1-x]As[sub 1-y]N[sub y]/GaAs single quantum wells emitting at room temperature in the wavelength range λ=(1.3-1.55) μm have been studied by photoluminescence (PL). By increasing temperature, we find that samples containing nitrogen have a luminescence thermal stability and a room temperature emission efficiency higher than that of the corresponding N-free heterostructures. The temperature dependence of the PL line shape shows a progressive carrier detrapping from localized to extended states as T is increased. Finally, the extent of the thermal shift of the free exciton energy for different y indicates that the electron band edge has a localized character which increases with nitrogen content. © 2000 American Institute of Physics.
ACCESSION #
4415285

 

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