TITLE

Suppression of intervalley scattering in Ga(As)Sb quantum wells

AUTHOR(S)
Hall, K. C.; Hall, K.C.; Leonard, S. W.; Leonard, S.W.; van Driel, H. M.; van Driel, H.M.; Kost, A. R.; Kost, A.R.; Selvig, E.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/30/2000, Vol. 77 Issue 18
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Femtosecond time-resolved reflectivity was measured near the 1.55 μm absorption edge of several GaAs[sub x]Sb[sub 1-x]/AlSb quantum well samples. On the basis of differences in the reflectivity recovery kinetics and plateau values, we deduce that Γ-L intervalley scattering can be effectively suppressed for x>=0.19. This is consistent with calculations incorporating confinement and strain effects which give L-Γ energy separations of 29 (x=0) and 109 meV (x=0.19). Suppression of intervalley scattering can lead to increased internal quantum efficiency and higher carrier mobility in 1.55 μm based devices. © 2000 American Institute of Physics.
ACCESSION #
4415281

 

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