High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy

Manfra, M. J.; Manfra, M.J.; Pfeiffer, L. N.; Pfeiffer, L.N.; West, K. W.; West, K.W.; Stormer, H. L.; Stormer, H.I.; Baldwin, K. W.; Baldwin, K.W.; Hsu, J. W. P.; Hsu, J.W.P.; Lang, D. V.; Lang, D.V.; Molnar, R. J.; Molnar, R.J.
October 2000
Applied Physics Letters;10/30/2000, Vol. 77 Issue 18
Academic Journal
We report on the growth and transport properties of high-mobility two-dimensional electron gases (2DEGs) confined at the AlGaN/GaN interface grown by plasma-assisted molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy. We have grown samples over a broad range of electron densities ranging from n[sub s]=6.9x10[sup 11] to 1.1x10[sup 13] cm[sup -2], and at T=4.2 K, observe a peak mobility of 53 300 cm[sup 2]/V s at a density of 2.8x10[sup 12] cm[sup -2]. Magnetotransport studies on these samples display exceptionally clean signatures of the quantum Hall effect. Our investigation of the dependence of 2DEG mobility on carrier concentration suggests that the low-temperature mobility in our AlGaN/GaN heterostructures is currently limited by the interplay between charged dislocation scattering and interface roughness. © 2000 American Institute of Physics.


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