TITLE

Microscopic model for enhanced dielectric constants in low concentration SiO[sub 2]-rich noncrystalline Zr and Hf silicate alloys

AUTHOR(S)
Lucovsky, G.; Rayner, G. B.; Rayner Jr., G.B.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/30/2000, Vol. 77 Issue 18
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Dielectric constants, k, of Zr(Hf) silicate alloy gate dielectrics obtained from analysis of capacitance-voltage curves of metal-oxide-semiconductor capacitors with 3-6 at. % Zr(Hf) are significantly larger than estimates of k based on linear extrapolations between SiO[sub 2] and compound silicates, Zr(Hf)SiO[sub 4]. Analysis of infrared spectra of Zr silicate alloys with 3-16 at. % Zr indicates increases in the coordination of Zr to O atoms from 4 to approximately 8 with increasing Zr content. The major contributions to enhancements in k in these low Zr(Hf) content alloys are explained by a transverse infrared effective charge that scales inversely with increasing Zr-O bond coordination. © 2000 American Institute of Physics.
ACCESSION #
4415271

 

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