Relative intensity noise characteristics of injection-locked semiconductor lasers

Jin, X.; Chuang, S. L.
August 2000
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
Academic Journal
An experimental and theoretical study of relative intensity noise (RIN) spectra of side-mode injection-locked Fabry-Pérot semiconductor lasers is reported. It is shown that the injection-locking technique effectively increases the relaxation oscillation frequency from 4.5 GHz (free-running mode) to 12 GHz (injection-locked mode) and enhances relaxation peaks of the slave laser RIN spectra. Results from our theoretical model, which include the key parameters for semiconductor quantum-well lasers, such as the linewidth enhancement factor, the nonlinear gain saturation coefficients, and optical confinement factor, show good agreement with our experimental results. © 2000 American Institute of Physics.


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