TITLE

InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K

AUTHOR(S)
Damilano, B.; Grandjean, N.; Massies, J.; Siozade, L.; Leymarie, J.
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InGaN/GaN quantum wells (QWs) were grown by molecular-beam epitaxy on c-plane sapphire substrates. The growth of InGaN is carried out at 550 °C with a large V/III ratio to counteract the low efficiency of NH[sub 3] at that temperature and to promote the two-dimensional mode of growth. An In composition of 16%±2% was determined by high-resolution x-ray diffraction experiments. Room-temperature photoluminescence of InGaN/GaN single QWs can be obtained over the whole visible spectrum (from 0.4 to 0.66 μm) by varying the well thickness from 1 to 5 nm. These heterostructures exhibit very large Stokes shifts between the emission and the absorption edge energies. © 2000 American Institute of Physics.
ACCESSION #
4415154

 

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