Epitaxial growth of laminar crystalline silicon on CaF[sub 2]

Schroeder, B. R.; Meng, Shuang; Bostwick, A.; Olmstead, Marjorie A.; Rotenberg, Eli
August 2000
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
Academic Journal
Si heteroepitaxy on CaF[sub 2] was studied with x-ray photoelectron spectroscopy and diffraction and low-energy electron diffraction to determine the interface bonding and silicon overlayer growth mode. The CaF[sub 2] surface was prepared by irradiation with low-energy electrons and exposure to arsenic, which replaced surface fluorine atoms with arsenic. Thin Si films (1.3 nm) were subsequently deposited at 550 °C. The Si films completely cover the CaF[sub 2] substrate and have a type-B orientation. The resultant interface has Si-Ca bonds, with the As surfactant layer terminating the Si surface in a 1x1 structure. © 2000 American Institute of Physics.


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