Strain status of self-assembled InAs quantum dots

Zhang, K.; Heyn, Ch.; Hansen, W.; Schmidt, Th.; Falta, J.
August 2000
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
Academic Journal
Grazing incidence x-ray diffraction experiments employing the asymmetric (202) Bragg diffraction have been performed to characterize self-assembled InAs quantum dots grown by molecular-beam epitaxy. We find that the strain is elastically relaxed with different components. The volume distribution of partially strained InAs inside islands is peaked at intermediate strain values. The fraction of both almost fully strained and totally relaxed InAs is found to be small. In addition, a small volume fraction of relaxed In[sub x]Ga[sub 1-x]As is found. © 2000 American Institute of Physics.


Related Articles

  • Growth patterns of self-assembled InAs quantum dots near the two-dimensional to.... Colocci, M.; Bogani, F. // Applied Physics Letters;6/9/1997, Vol. 70 Issue 23, p3140 

    Presents the growth patterns of self-assembled indium arsenide quantum dots grown by molecular beam epitaxy near the two-dimensional to three-dimensional transition. Photoluminescence spectra following dot excitation; Range of spacing separating the emission bands; Ascription of individual...

  • Morphology of InAs self-organized islands on AIAs surfaces. Ballet, P.; Smathers, J.B.; Salamo, G.J. // Applied Physics Letters;7/19/1999, Vol. 75 Issue 3, p337 

    Discusses results of an in situ molecular-beam epitaxy-scanning tunneling microscopy study of three-dimensional (3D) self-organized islands of indium arsenide on AIA surfaces. Density and morphology of the 3D islands as a function of indium arsenide coverage and substrate temperature; Critical...

  • Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source.... Ponchet, A.; Le Corre, A. // Applied Physics Letters;9/25/1995, Vol. 67 Issue 13, p1850 

    Examines the growth modes of InAs islands grown on an InP(001) substrate by gas source molecular beam epitaxy. Discussion of size distribution and self organization of quantum dots; Existence of two kinds of coherent islands not controlled by surface transport; Dependence on island elastic and...

  • Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001). Liu, Feng-Qi; Wang, Zhan-Guo // Journal of Applied Physics;1/1/1999, Vol. 85 Issue 1, p619 

    Investigates the growth of InGaAs self-assembled quantum dots (QD) in InAlAs on an InP(001) substrate through molecular beam epitaxy. Deposition of InGa monolayers; Experimental procedures; Results; Discussion.

  • Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system. Vasil’ev, D. G.; Evtikhiev, V. P.; Tokranov, V. E.; Kudryashov, I. V.; Kochereshko, V. P. // Physics of the Solid State;May98, Vol. 40 Issue 5, p787 

    A study is reported of the effect of (001)GaAs substrate misorientation in the [010] direction on the distribution of MBE-grown self-assembled InAs/GaAs quantum dots in size and position in the GaAs matrix. Temperature-induced narrowing of the exciton photoluminescence line of a quantum-dot...

  • Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. Kuzmenkov, A. G.; Ustinov, V. M.; Sokolovskii, G. S.; Maleev, N. A.; Blokhin, S. A.; Deryagin, A. G.; Chumak, S. V.; Shulenkov, A. S.; Mikhrin, S. S.; Kovsh, A. R.; McRobbie, A. D.; Sibbett, W.; Cataluna, M. A.; Rafailov, E. U. // Applied Physics Letters;9/17/2007, Vol. 91 Issue 12, p121106 

    The authors report the observation of strong self-pulsations in molecular-beam epitaxy–grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100–300 ps and...

  • Studying the formation of self-assembled (In,Mn)As quantum dots. Buravlev, A.; Zaitsev, A.; Brunkov, P.; Sapega, V.; Khrebtov, A.; Samsonenko, Yu.; Cirlin, G.; Dubrovskii, V.; Ustinov, V. // Technical Physics Letters;May2012, Vol. 38 Issue 5, p460 

    Self-assembled quantum dots (SQDs) based on (In,Mn)As solid solutions have been synthesized by molecular beam epitaxy on GaAs(100) substrates. Examination of the surface morphology of samples by the method of atomic force microscopy showed that the presence of Mn influences the surface density...

  • InN island shape and its dependence on growth condition of molecular-beam epitaxy. Cao, Y.G.; Xie, M.H.; Liu, Y.; Ng, Y.F.; Wu, H.S.; Tong, S.Y. // Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5157 

    During molecular-beam epitaxy of InN films on GaN(0001) surface, three-dimensional (3D) islands are observed following an initial wetting layer formation. Depending on deposition condition, the 3D islands take different shapes. Pyramidal islands form when excess nitrogen fluxes are used, whereas...

  • InGaAs quantum dot molecules around self-assembled GaAs nanomound templates. Lee, J. H.; Wang, Zh. M.; Strom, N. W.; Mazur, Yu. I.; Salamo, G. J. // Applied Physics Letters;11/13/2006, Vol. 89 Issue 20, p202101 

    Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics