Structural and luminescence properties of nanostructured ZnS:Mn

Adachi, Daisuke; Hasui, Shigeki; Toyama, Toshihiko; Okamoto, Hiroaki
August 2000
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
Academic Journal
We have studied structural and luminescence properties of nanostructured (NS-) ZnS:Mn which has potential applications in thin-film electroluminescence (TFEL) devices. As a NS-ZnS:Mn system, a ZnS:Mn/Si[sub 3]N[sub 4] multilayer having thicknesses of 2.5 nm for ZnS and 0.6 nm for Si[sub 3]N[sub 4] was prepared by a conventional rf-magnetron sputtering method. Grazing incidence x-ray reflectometry and x-ray diffractometry show that ZnS:Mn nanocrystals were formed between the amorphous Si[sub 3]N[sub 4] layers. Photoluminescence intensity associated with the Mn[sup 2+] transitions per total thickness of the ZnS:Mn layers is increased in NS-ZnS:Mn in comparison with that of the ZnS:Mn thin film, indicating the effects due to quantum confinement. The TFEL device with NS-ZnS:Mn as an emission layer exhibits a reddish-orange broad band emission with the maximum luminance of 2.8 cd/m[sup 2] under the 1-kHz sinusoidal wave operation at a voltage of 20.5 V[sub 0-p]. © 2000 American Institute of Physics.


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