TITLE

Substitutional C fraction and the influence of C on Si dimer diffusion in Si[sub 1-y]C[sub y] alloys grown on (001) and (118) Si

AUTHOR(S)
Croke, E. T.; Grosse, F.; Vajo, J. J.; Gyure, M. F.; Floyd, M.; Smith, David J.
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The dependence of substitutional C fraction on growth temperature and substrate orientation is measured for Si[sub 1-y]C[sub y] alloy films grown on (001) and (118) Si by molecular-beam epitaxy. Secondary ion mass spectrometry and high-resolution x-ray diffraction were used to measure the total C and the substitutional C concentrations, respectively, in several samples prepared at temperatures between 450 and 650 °C. The substitutional C fraction decreased rapidly with increasing temperature in this range, regardless of orientation, and was slightly lower for growth on (118) Si. Cross-sectional transmission electron microscopy on (118)-oriented samples revealed a tendency for C to concentrate periodically on (001) facets which formed immediately after initiation of Si[sub 1-y]C[sub y] growth. A kinetic Monte Carlo simulation based upon enhanced diffusion of Si dimers in the presence of subsurface C predicted a step instability leading to step bunching and the formation of periodic surface features, as well as the accumulation of high C concentrations on nearly (001) planes. © 2000 American Institute of Physics.
ACCESSION #
4415140

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics