Topographic effects in low-energy radiation damage

Rahman, M.; Mathieson, K.
August 2000
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
Academic Journal
We have studied the effect of low-index channeling on sidewall dry-etch damage. A quantum electron beam in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure was used to probe electrical damage at a specific depth down an etched sidewall. In analyzing the measured behavior as a function of etch time we have developed a model for the sidewall damage distribution that takes into account the geometry of the <110> channels in detail. The analysis shows that more damage is possible beneath regions of high topography than is usually assumed. © 2000 American Institute of Physics.


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