Electrical properties of boron-doped p-SiGeC grown on n[sup -]-Si substrate

Ahoujja, M.; Yeo, Y. K.; Hengehold, R. L.; Pomrenke, G. S.; Look, D. C.; Huffman, Jim
August 2000
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
Academic Journal
Electrical properties of fully strained boron-doped Si[sub 0.90-y]Ge[sub 0.10]C[sub y]/n[sup -]-Si grown by low pressure chemical vapor deposition have been investigated as a function of carbon content (0.2%-1.5%), using the variable temperature (25-650 K) Hall-effect technique. The results of Hall-effect measurements show that the Si substrate and the SiGeC/Si interfacial layer affect significantly the electrical properties of the SiGeC epitaxial layer. Thus, a three-layer conducting model has been used to extract the carrier concentration and mobility of the SiGeC layer alone. At room temperature, the hole carrier concentration decreases from 6.8x10[sup 17] to 2.4x10[sup 17] cm[sup -3] and the mobility decreases from 488 to 348 cm2/V s as the carbon concentration increases from 0.2% to 1.5%. The boron activation energy increases from 20 to 50 meV as C increases from 0.2% to 1.5% with an increment of 23 meV per atomic % of C. © 2000 American Institute of Physics.


Related Articles

  • Low temperature and selective growth of β-SiC using the SiH2Cl2/i-C4H10/HCl/H2 gas system. Ohshita, Yoshio // Applied Physics Letters;8/6/1990, Vol. 57 Issue 6, p605 

    β-SiC is grown on a silicon substrate by the chemical vapor deposition method using the SiH2Cl2/i-C4H10/H2/HCl gas system. Stoichiometric β-SiC films are obtained with high growth rate at a low temperature of 900 °C. Highly (111) oriented β-SiC polycrystal is grown on a Si(111)...

  • Sharp phosphorus spikes in silicon grown by fast gas-switching chemical vapor deposition at.... Roksnoer, P.J.; Maes, J.W.F.M.; Vink, A.T.; Vriezema, C.J.; Zalm, P.C. // Applied Physics Letters;12/16/1991, Vol. 59 Issue 25, p3297 

    Demonstrates the sharp P spikes grown by fast-gas-switching chemical vapor deposition at reduced and atmospheric pressure. Prevention of tail formation; Fabrication of transistors with high cutoff frequencies; Measurement of phosphorus profiles by secondary ion mass spectroscopy.

  • Symmetric Si/Si[sub 1-x]Ge[sub x] two-dimensional hole gases grown by rapid thermal chemical.... Venkataraman, V.; Schwartz, P.V.; Sturm, J.C. // Applied Physics Letters;11/25/1991, Vol. 59 Issue 22, p2871 

    Fabricates single and symmetric double p-type modulation-doped heterostructures in silicon/silicon germanide by rapid-thermal chemical-vapor deposition. Detection of well-confined two-dimensional hole gases; Carrier density and mobility of the samples; Symmetry of the interfaces within 10 angstrom.

  • Deep level defects in electron-irradiated 4H SiC epitaxial layers. Hemmingsson, C.; Son, N. T.; Kordina, O.; Bergman, J. P.; Janze´n, E.; Lindstro¨m, J. L.; Savage, S.; Nordell, N. // Journal of Applied Physics;5/1/1997, Vol. 81 Issue 9, p6155 

    Deep level defects in electron-irradiated 4H SiC epitaxial layers grown by chemical vapor deposition were studied using deep level transient spectroscopy. The measurements performed on electron-irradiated p+n junctions in the temperature range 100-750 K revealed several electron traps and one...

  • Metastable surface ordering in strain relaxed Si[sub 0.5]Ge[sub 0.5]... Reichert, H.; Moss, S.C.; Imperatori, P.; Evans-Lutterodt, K. // Applied Physics Letters;1/25/1999, Vol. 74 Issue 4, p531 

    Studies the compositional ordering in the near surface region of a thick unstrained silicon (Si)[sub0.5] germanium (Ge)[sub0.5] samples grown by chemical vapor deposition. Characterization by integer/half-integer reflections along the integer surface at the center of a certain type of...

  • Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH4 reduced chemically vapor deposited W. Joshi, R. V.; Prasad, V.; Krusin-Elbaum, L.; Yu, M.; Norcott, M. // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5625 

    Presents a study which examined the mechanisms controlling temperature dependent mechanical and electrical behavior of SiH[sub4] reduced chemically vapor deposited (CVD) tungsten (W). Information on the technical applications for CVD W; Explanation for the small amount of silicon incorporated...

  • Enhancement of deposition rate by adding Si2F6 in low-pressure chemical vapor deposition of W using WF6 and H2. Nishikawa, Satoshi; Matsuhashi, Hideaki; Ohno, Seigo // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p774 

    Studies the effects of addition of silicon compound to low-pressure chemical vapor deposition of tungsten using tungsten fluoride and hydrogen ion system. Applications of low-pressure chemical vapor deposition of tungsten; Details on the experiment; Discussion on the results of the study.

  • High-quality amorphous silicon germanium produced by catalytic chemical vapor deposition. Matsumura, Hideki // Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p804 

    High-quality amorphous silicon germanium (a-SiGe:H) films are produced by a new ‘‘catalytic chemical vapor deposition (CTL CVD)’’ method. In the method, a SiH4, GeH4, and H2 gas mixture is decomposed without using any plasmas or photochemical excitation, but using only...

  • Gas-phase silicon atoms in silane chemical vapor deposition: Laser-excited fluorescence measurements and comparisons with model predictions. Breiland, William G.; Ho, Pauline; Coltrin, Michael E. // Journal of Applied Physics;8/15/1986, Vol. 60 Issue 4, p1505 

    Presents information on a study that used laser-excited fluorescence to detect gas-phase silicon atoms during chemical vapor deposition from silane. Experimental procedures; Theoretical model; Analysis and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics