TITLE

Electrical properties of boron-doped p-SiGeC grown on n[sup -]-Si substrate

AUTHOR(S)
Ahoujja, M.; Yeo, Y. K.; Hengehold, R. L.; Pomrenke, G. S.; Look, D. C.; Huffman, Jim
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electrical properties of fully strained boron-doped Si[sub 0.90-y]Ge[sub 0.10]C[sub y]/n[sup -]-Si grown by low pressure chemical vapor deposition have been investigated as a function of carbon content (0.2%-1.5%), using the variable temperature (25-650 K) Hall-effect technique. The results of Hall-effect measurements show that the Si substrate and the SiGeC/Si interfacial layer affect significantly the electrical properties of the SiGeC epitaxial layer. Thus, a three-layer conducting model has been used to extract the carrier concentration and mobility of the SiGeC layer alone. At room temperature, the hole carrier concentration decreases from 6.8x10[sup 17] to 2.4x10[sup 17] cm[sup -3] and the mobility decreases from 488 to 348 cm2/V s as the carbon concentration increases from 0.2% to 1.5%. The boron activation energy increases from 20 to 50 meV as C increases from 0.2% to 1.5% with an increment of 23 meV per atomic % of C. © 2000 American Institute of Physics.
ACCESSION #
4415134

 

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