TITLE

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors on SiC substrates

AUTHOR(S)
Khan, M. Asif; Hu, X.; Tarakji, A.; Simin, G.; Yang, J.; Gaska, R.; Shur, M. S.
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown over insulating 4H-SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO[sub 2]/AlGaN heterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 °C with excellent pinch-off characteristics. These results clearly establish the potential of using AlGaN/GaN MOS-HFET approach for high power microwave and switching devices. © 2000 American Institute of Physics.
ACCESSION #
4415130

 

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