TITLE

Observation of magnetic domain structure in a ferromagnetic semiconductor (Ga, Mn)As with a scanning Hall probe microscope

AUTHOR(S)
Shono, T.; Hasegawa, T.; Fukumura, T.; Matsukura, F.; Ohno, H.
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have performed low-temperature scanning Hall probe microscopy on a ferromagnetic semiconductor (Ga[sub 0.957]Mn[sub 0.043])As. The observed magnetic domain structure is a stripe-shaped pattern as has been observed in conventional nonsemiconductor ferromagnetic materials, and the measured magnetic field from the sample surface was small, reflecting the weak magnetization of (Ga, Mn)As. The domain width increased and the measured magnetic field decreased with raising temperature, which are consistent with calculated results, in which the exchange interaction between Mn spins deduced from the Curie temperature is assumed. © 2000 American Institute of Physics.
ACCESSION #
4415121

 

Related Articles

  • Piezoelectric control of the mobility of a domain wall driven by adiabatic and non-adiabatic torques. De Ranieri, E.; Roy, P. E.; Fang, D.; Vehsthedt, E. K.; Irvine, A. C.; Heiss, D.; Casiraghi, A.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.; Wunderlich, J. // Nature Materials;Sep2013, Vol. 12 Issue 9, p808 

    The rich internal degrees of freedom of magnetic domain walls make them an attractive complement to electron charge for exploring new concepts of storage, transport and processing of information. Here we use the tunable internal structure of a domain wall in a perpendicularly magnetized...

  • Strain-driven fractional spontaneous exchange bias in ferromagnetic/antiferromagnetic thin films with composition-graded ferromagnetic layer. Phuoc, Nguyen N.; Ong, C. K. // Journal of Applied Physics;2014, Vol. 115 Issue 14, p143901-1 

    We experimentally demonstrate that the stress-induced magnetic anisotropy in composition-graded ferromagnetic NiFeTa layers can be employed to trigger exchange bias in NiFeTa/IrMn bilayers without using any deposition field or field cooling procedure. In particular, we found that the NiFeTa/IrMn...

  • Cells positioning using magnetic domain walls of ferromagnetic zigzag thin film. Huang, Hao-Ting; Chen, Chia-Yi; Lai, Mei-Feng // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p07B315 

    Magnetic cell positioning is demonstrated by controlling the magnetic domain walls in ferromagnetic zigzag thin films. Magnetophoresis experiment is performed to determine the number of magnetic nanoparticles that enter the cells by endocytosis. It is observed that in the zigzag structure with...

  • Manipulation of magnetic properties and domain wall dynamics in amorphous ferromagnetic microwires by annealing under applied stress. Chichay, K.; Rodionova, V.; Zhukova, V.; Ipatov, M.; Zhukov, A. // Solid State Phenomena;2014, Vol. 215, p432 

    The effect of annealing under applied stress on magnetic properties of Co-based or CoFeNi-based glass-coated microwires was studied. It was found that CoFeNi-based microwires became bistable after annealing because of changing of magnetostriction constant sign, while Cobased microwires keep...

  • Exploiting phase separation in monolithic La0.6Ca0.4MnO3 devices. Granja, L.; Hueso, L. E.; Levy, P.; Mathur, N. D. // Applied Physics Letters;8/5/2013, Vol. 103 Issue 6, p062404 

    Devices based on mesas were fabricated from thin films of magnetically phase-separated La0.6Ca0.4MnO3. Low-field magnetoresistance arises because the volume fraction of the ferromagnetic metallic phase is large enough for percolation but small enough to permit magnetic decoupling between each...

  • Optical patterning of magnetic domains and defects in ferromagnetic liquid crystal colloids. Hess, Andrew J.; Qingkun Liu; Smalyukh, Ivan I. // Applied Physics Letters;8/17/2015, Vol. 107 Issue 7, p071906-1 

    A promising approach in designing composite materials with an unusual physical behavior combines solid nanostructures and orientationally ordered soft matter at the mesoscale. Such composites can not only inherit properties of their constituents but also can exhibit emergent behavior such as...

  • Heating of magnons by hot charge carriers and electrical properties of HgCr[sub 2]Se[sub 4]. Solin, N. I.; Samokhvalov, A. A.; Naumov, S. V. // Physics of the Solid State;Apr97, Vol. 39 Issue 4, p580 

    Strong variations of the conductivity and the Hall coefficient as a function of the magnetic and electric field strengths are discovered in the ferromagnetic semiconductor HgCr[sub 2]Se[sub 4]. The nature of these phenomena is discussed in connection with its electronic structure and the strong...

  • Positive magnetoresistance in films of the ferromagnetic semiconductor Eu[sub 1-x]Sm[sub x]O. Kabanov, V. F.; Sverdlova, A. M. // Semiconductors;May97, Vol. 31 Issue 5, p531 

    The positive magnetoresistance effect in a film of the ferromagnetic semiconductor Eu[sub 1-x]xSm[sub x]O has been studied; this effect is not characteristic of materials of this class. The effect of the external magnetic and electric fields and temperature on the positive magnetoresistance was...

  • Epitaxial growth of an n-type ferromagnetic semiconductor CdCr[sub 2]Se[sub 4] on GaAs(001) and GaP(001). Park, Y. D.; Hanbicki, A. T.; Mattson, J. E.; Jonker, B. T. // Applied Physics Letters;8/19/2002, Vol. 81 Issue 8, p1471 

    We report the epitaxial growth of CdCr[sub 2]Se[sub 4], an n-type ferromagnetic semiconductor, on both GaAs and GAP(001) substrates, and describe the structural, magnetic, and electronic properties. Magnetometry data confirm ferromagnetic order with a Curie temperature of 130 K, as in the bulk...

  • Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As. Jungwirth, T.; Abolfath, M.; Sinova, Jairo; Kucˇera, J.; MacDonald, A. H. // Applied Physics Letters;11/18/2002, Vol. 81 Issue 21, p4029 

    We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn[sup 2+] acceptors with a local moment S=5/2 and from nonmagnetic compensating defects. In metallic samples Boltzmann...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics