Hydrogen barriers for SrBi[sub 2]Ta[sub 2]O[sub 9]-based ferroelectric memories

Yang, B.; Suh, C. W.; Lee, C. G.; Kang, E. Y.; Kang, Y. M.; Lee, S. S.; Hong, S. K.; Kang, N. S.; Yang, J. M.
August 2000
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
Academic Journal
We report on a hydrogen barrier necessary for a conventional passivation process of integrated SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT)-based memories. The passivation process significantly degraded electrical properties of the memories, resulting from hydrogen damage in the SBT capacitors. Metallic films (Ti, TiN, and Al) were investigated as a hydrogen barrier during the passivation process. The Ti(>500 Å) hydrogen barrier only showed the electrical properties of memories free from hydrogen damage. The formation of stable hydrides and the suppressed diffusion of hydrogen through the Ti films during the passivation processes resulted in sufficient switching polarization, low leakage current, and good reliabilities at high temperature. © 2000 American Institute of Physics.


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