Charge trapping in very thin high-permittivity gate dielectric layers

Houssa, M.; Stesmans, A.; Naili, M.; Heyns, M. M.
August 2000
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
Academic Journal
The trapping of charge carriers in very thin SiO[sub x]/ZrO[sub 2] and SiO[sub x]/TiO[sub 2] gate dielectric stacks during constant gate voltage stress of metal-oxide-semiconductor capacitors has been investigated. The increase of the gate current density observed during the gate voltage stress has been analyzed, taking into account both the buildup of charges in the layer as well as the stress-induced leakage current contribution. From data analysis, the cross section of traps generated during the electrical stress is estimated. It is suggested that these traps are probably ZrOH and TiOH neutral centers that are related to the breaking of bridging O bonds by mobile H[sup +] protons followed by the trapping of these protons at ZrO or TiO sites. © 2000 American Institute of Physics.


Related Articles

  • Electronic concepts, inc.  // ECN: Electronic Component News;May99 Supplement, Vol. 43, p72 

    Focuses on the film dielectric capacitor manufacturer Electronic Concepts Inc. in New Jersey. Utilization of quality assurance procedures in manufacturing; Production of dielectric in the company; Development of a technology for the accommodation of higher voltages.

  • Electrical characteristics of Si[sub 3]N[sub 4]/Si/GaAs metal-insulator-semiconductor capacitor. Mui, D.S.L.; Liaw, H.; Demirel, A.L.; Strite, S.; Morkoc, H. // Applied Physics Letters;11/25/1991, Vol. 59 Issue 22, p2847 

    Examines the electrical characteristics of an as-grown Si[sub 3]N[sub 4]/Si/n-GaAs metal-insulator-semiconductor capacitors. Current voltage characteristics of the dielectric films at high fields; Observation of the hole inversion of the n-GaAs layer in the quasi-static capacitance voltage...

  • Monte Carlo Simulation of the Dielectric Response from Ferroelectrics. Yudin, P. N.; Nikol�sky, M. A.; Zubko, S. P. // Technical Physics;Aug2003, Vol. 48 Issue 8, p995 

    The simulation of the response of a ferroelectric film as a part of a plane capacitor or any other nonlinear element is of particular importance for designing microwave ferroelectric devices. Models required for the description of the dielectric response and the capacitance of the plane...

  • United States : AEROVOX TECHNOLOGY develops new UltraTherm(TM) technology.  // TendersInfo News;7/30/2014, p1 

    The article reports on the UltraTherm (TM) technology created by film capacitor manufacturer Aerovox Corp., which enhances dielectric breakdown and increases the stability of polypropylene film capacitors in high temperature applications.

  • Properties of a Classical Electron Gas at the Surface of Condensed Media. Dyugaev, A. M.; Grigor’ev, P. D.; Ovchinnikov, Yu. N. // Journal of Experimental & Theoretical Physics;Jun2000, Vol. 90 Issue 6, p1089 

    An analysis is made of the problem of the density distribution of a classical electron gas in a charged capacitor whose electrodes are coated with dielectric films (liquid or solid). At high density the electrons form thin layers at each of the capacitor electrodes. The electric field...

  • Temperature dependence of ferroelectric and dielectric properties of PbZr[sub 0.5]Ti[sub 0.5]O[sub 3] thin film based capacitors. Meng, X. J.; Sun, J. L.; Wang, X. G.; Lin, T.; Ma, J. H.; Guo, S. L.; Chu, J. H. // Applied Physics Letters;11/18/2002, Vol. 81 Issue 21, p4035 

    The temperature dependence of the ferroelectric and dielectric properties of PbZr[sub 0.5]Ti[sub 0.5]O[sub 3] thin films deposited on LaNiO[sub 3]-coated SrTiO[sub 3] substrate was investigated. The results showed that both the saturation polarization and remanent polarization increased with...

  • Discovery of a useful thin-film dielectric using a composition-spread approach. Van Dover, R.B.; Schneemeyer, L.F.; Fleming, R. M. // Nature;3/12/1998, Vol. 392 Issue 6672, p162 

    Presents research which showed that a composition-spread technique allows for the efficient evaluating of materials with both a high dielectric constant and a high breakdown field. Application of approach to the Zr--Sn--Ti--O system; Better thin-film dielectrics resulting; Applications for...

  • Dielectric properties of Ba0.5Sr0.5TiO3/SiN bilayered thin films grown on Pt-coated sapphire substrates. Niandeng Xiong; Shuwen Jiang; Yanrong Li; Lefan Tan; Ruguan Li // Applied Physics Letters;12/8/2008, Vol. 93 Issue 23, p232905 

    The Ba0.5Sr0.5TiO3(BST)/SiN bilayered thin films with a SiN layer serving as a buffer layer between the top electrode and the BST layer have been prepared onto Pt-coated c-plane sapphire substrates. The dielectric measurements show that the loss tangent has been significantly lowered. The...

  • Thickness dependence of dielectric properties in bismuth layer-structured dielectrics. Takahashi, Kenji; Suzuki, Muneyasu; Kojima, Takashi; Watanabe, Takayuki; Sakashita, Yukio; Kato, Kazumi; Sakata, Osami; Sumitani, Kazushi; Funakubo, Hiroshi // Applied Physics Letters;8/21/2006, Vol. 89 Issue 8, p082901 

    c-axis-oriented epitaxial SrBi4Ti4O15 and CaBi4Ti4O15 films having natural superlattice structure were grown on (001)cSrRuO3∥(001)SrTiO3 substrates by metal organic chemical vapor deposition. SrBi4Ti4O15 films suffer no degradation with a dielectric constant of 200 down to a film thickness...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics