TITLE

Amorphous silicon junction field-effect transistor for digital and analog applications

AUTHOR(S)
Caputo, D.; de Cesare, G.; Kellezi, V.; Palma, F.
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A hydrogenated amorphous silicon field-effect transistor suitable for digital and analog applications is described. The device consists of a p[sup +]-i-n[sup -] junction, with the drain and source contacts connected to the n[sup -] layer and the control gate electrode to the p[sup +] layer. As in the corresponding crystalline junction field-effect transistor, the channel resistivity is modulated by the gate voltage. The selection of the thickness of the intrinsic layer and the doping and thickness of the n layer is critical for correct operation of the device. A device with a well defined triode and saturation region was manufactured. A transconductance of 1.5x10[sup -6] A/V at V[sub DS]=25 V was achieved. This value is comparable to that of state-of-the-art thin-film transistors. © 2000 American Institute of Physics.
ACCESSION #
4415112

 

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