TITLE

Hole blocking in carbon nanotube-polymer composite organic light-emitting diodes based on poly (m-phenylene vinylene-co-2, 5-dioctoxy-p-phenylene vinylene)

AUTHOR(S)
Woo, H. S.; Czerw, R.; Webster, S.; Carroll, D. L.; Ballato, J.; Strevens, A. E.; O'Brien, D.; Blau, W. J.
PUB. DATE
August 2000
SOURCE
Applied Physics Letters;8/28/2000, Vol. 77 Issue 9
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In order to investigate the role of carbon nanotubes in a polymer matrix, organic light-emitting diodes were fabricated from a polymer composite composed of poly (m-phenylene vinylene-co-2,5-dioctoxy-p-phenylene) (PmPV) and dispersed single-wall carbon nanotubes (SWNTs). Tris-(8-hydroxyquinolinolato) aluminum (Alq[sub 3]) doped by Nile Red was used as an emissive material between the polymer composite and cathode. The device fabricated without SWNTs dispersed in the PmPV shows a dominant emission near red at 600 nm, which is in the range of the characteristic emission of Nile Red-doped Alq[sub 3], with a small amount of green emission from the PmPV. However, the devices fabricated with the polymer composite show an increase in the oscillator strength of the green emission with a dominant emission peak near 500 nm, the characteristic emission of PmPV. This was observed for SWNT concentrations up to 0.1 wt %. The shift in the emission indicates that the SWNTs in the PmPV matrix act as a hole-blocking material that results in a shifting of the recombination region from the Nile Red-doped Alq[sub 3] layer to the PmPV composite layer. © 2000 American Institute of Physics.
ACCESSION #
4415111

 

Related Articles

  • Enhanced thermal stability in organic light-emitting diodes through nanocomposite buffer layers at the anode/organic interface. Grozea, D.; Turak, A.; Yuan, Y.; Han, S.; Lu, Z. H.; Kim, W. Y. // Journal of Applied Physics;2/1/2007, Vol. 101 Issue 3, p033522 

    The effect of doped buffer layers at the anode/organic interface in small molecule organic light-emitting diodes was investigated. Appropriate doping of N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) and Cu-phthalacyanine (CuPc) layers using LiF or...

  • Development of semi-interpenetrating polymer networks and quantum dots–polymer nanocomposites for low-cost, flexible OLED display application. Zhao, Lihua; Zhou, Zhang-Lin; Guo, Zengshan; Gibson, Gary; Brug, James A.; Lam, Sity; Pei, Jian; Mao, Samuel S. // Journal of Materials Research;2012, Vol. 27 Issue 4, p639 

    Recently, tremendous progress has been made toward the application of organic light-emitting diodes (OLEDs) in full color flat panel displays and other devices. This article reviews and discusses our recent progress in extended development of emissive semi-interpenetrating polymer networks...

  • Modeling of light-emission spectra measured on silicon nanometer-scale diode antifuses. Akil, N. // Journal of Applied Physics;8/15/2000, Vol. 88 Issue 4, p1916 

    Investigates the origin of emitted light from silicon nanometer-scale diode antifuses. Properties of diode antifuses; Measurement of the electroluminescence spectra of reverse- and forward-biased antifuses; Application of a phono-assisted electron-hole recombination.

  • Visible light-emitting devices with Schottky contacts on an ultrathin amorphous silicon layer... Fujita, S.; Sugiyama, N. // Applied Physics Letters;1/11/1999, Vol. 74 Issue 2, p308 

    Reports on the fabrication of light-emitting diodes (LED) with Schottky contacts on a single ultrathin amorphous silicon layer containing silicon nanocrystals. Visibility of orange electroluminescence LED to the naked eye at room temperature.

  • Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes. Boroditsky, M.; Gontijo, I. // Journal of Applied Physics;4/1/2000, Vol. 87 Issue 7, p3497 

    Presents information on a study which focused on the surface recombination of an optoelectronic material for nanostructure light-emitting diodes. Experimental setup; Description of the radiative transport model; Summary of material properties.

  • Gaining light from silicon. Canham, Leigh // Nature;11/23/2000, Vol. 408 Issue 6811, p411 

    Focuses on silicon, which has long been perceived as inefficient at emitting light, and thus having a minor role in optoelectronics. Outlook for light-emitting diodes (LEDs) made from porous or nanocrystalline silicon; Reasons why silicon LEDs are not yet commercially attractive; What Pavesi et...

  • Nanorods. Kren, Lawrence // Machine Design;09/07/2000, Vol. 72 Issue 17, p52 

    Deals with the rod-shaped nanocrystals produced by scientists at Lawrence Berkeley National Labs. Contents of the nanocrystals; Difference between light-emitting diodes made of dot-shaped nanocrystals and rod-shaped nanocrystals.

  • SURFACE ENGINEERING.  // Advanced Materials & Processes;Mar2013, Vol. 171 Issue 3, p13 

    The article presents news briefs related to the advanced materials industry. A light emitting diode was designed by scientists from Belgium, France, Canada by imitating the lantern structure of fireflies. A nanoscale air-repellent coating was developed by scientists at the University of...

  • Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation. Jeomoh Kim; Mi-Hee Ji; Dajun Yuan; Rui Guo; Jianping Liu; Asadirad, Mojtaba; Detchprohm, Theeradetch; Min-Ki Kwon; Dupuis, Russell D.; Das, Suman; Jae-Hyun Ryou // Applied Physics Letters;4/7/2014, Vol. 104 Issue 14, p1 

    We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro- and nano-structures aimed at enhancing light output. Holes arranged in a...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics