TITLE

Stable nonplanar surface formed on patterned GaAs (311)A substrate by molecular-beam epitaxy

AUTHOR(S)
Gong, Q.; No¨tzel, R.; Scho¨nherr, H.-P.; Ploog, K. H.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/27/2000, Vol. 77 Issue 22
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The evolution of the growth front during molecular-beam epitaxy on patterned GaAs (311)A substrates is investigated by cross-sectional atomic force microscopy. The growth rate on the sidewalls is enhanced due to the preferential atom migration from the mesa top and bottom to the sidewalls. The growth front evolution is terminated by the formation of a stable, corrugated surface which is composed of (311)A terraces and steps toward the [23¯3¯] and [2¯33] directions. Modulation of island density in strained-layer growth is demonstrated by growing 4 ML InAs on this nonplanar surface. © 2000 American Institute of Physics.
ACCESSION #
4415088

 

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