Size effects on the luminescence spectrum in amorphous Si/SiO[sub 2] multilayer structures

Kanemitsu, Yoshihiko; Kushida, Takashi
November 2000
Applied Physics Letters;11/27/2000, Vol. 77 Issue 22
Academic Journal
We have studied size effects on the photoluminescence (PL) spectrum in amorphous silicon (a-Si)-based multilayer structures. At low temperatures, the PL spectrum and the PL lifetime are sensitive to the a-Si well thickness in a-Si/SiO[sub 2] multilayers. With a decrease of the a-Si well thickness, the PL peak energy and the mobility edge shift to higher energy. The temperature dependence of the PL spectrum shows that the size-dependent visible luminescence is ascribed to radiative recombination of carriers localized in the band-tail state, rather than the band-edge emission in quantum-confined states. The quantum confinement and localization of carriers in the band-tail states will be discussed. © 2000 American Institute of Physics.


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