TITLE

SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications

AUTHOR(S)
Usami, N.; Azuma, Y.; Ujihara, T.; Sazaki, G.; Nakajima, K.; Yakabe, Y.; Kondo, T.; Koh, S.; Shiraki, Y.; Zhang, B.; Segawa, Y.; Kodama, S.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/27/2000, Vol. 77 Issue 22
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
SiGe bulk crystal fabricated by a multicomponent zone-melting method was used as a substrate for epitaxial growth of GaAs. Compared with conventional GaAs/Ge heterostructure, the lattice mismatch of GaAs/Si[sub 0.022]Ge[sub 0.978] was confirmed to be reduced by a decrease of the peak separation of (400) x-ray diffraction from the epitaxial GaAs layer and the substrate. Furthermore, the linewidth of the rocking curve of GaAs on SiGe was found to be narrower than that of GaAs on Ge. These results show that SiGe is promising material as an alternative substrate to Ge for realization of exactly lattice-matched GaAs/SiGe solar cells. © 2000 American Institute of Physics.
ACCESSION #
4415079

 

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