TITLE

Ion-beam-induced dissociation and bubble formation in GaN

AUTHOR(S)
Kucheyev, S. O.; Kucheyev, S.O.; Williams, J. S.; Williams, J.S.; Zou, J.; Jagadish, C.; Li, G.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/27/2000, Vol. 77 Issue 22
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Structural studies reveal that heavy ion bombardment of GaN causes amorphization and anomalous swelling of the implanted region as a result of the formation of a porous structure. Results strongly suggest that such a porous structure consists of N[sub 2] gas bubbles embedded into a highly N-deficient amorphous GaN matrix. The evolution of the porous structure in amorphous GaN appears to be a result of stoichiometric imbalance where N- and Ga-rich regions are produced by ion bombardment. Prior to amorphization, ion bombardment does not produce a porous structure due to very efficient dynamic annealing processes in the crystalline phase. © 2000 American Institute of Physics.
ACCESSION #
4415075

 

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