TITLE

Crystallization kinetics in electron-beam evaporated amorphous silicon on ZnO:Al-coated glass for thin film solar cells

AUTHOR(S)
Sontheimer, T.; Becker, C.; Bloeck, U.; Gall, S.; Rech, B.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p101902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
To systematically study the crystallization process of electron-beam evaporated amorphous silicon on ZnO:Al-coated glass for polycrystalline silicon thin film solar cells, transmission electron microscopy and optical microscopy were employed. A time and temperature dependent analysis allowed the individual investigation of the growth and nucleation processes. The growth velocities of Si-crystals on ZnO:Al and SiN-coated glass were found to be identical within the investigated temperature regime of 500–600 °C. However, with a high steady state nucleation rate and a low activation energy, the nucleation process of Si on ZnO:Al-coated glass has shown to differ significantly from nucleation on glass.
ACCESSION #
44150724

 

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