Semiconductor behaviors of low loading multiwall carbon nanotube/poly(dimethylsiloxane) composites

Hu, C. H.; Liu, C. H.; Chen, L. Z.; Fan, S. S.
September 2009
Applied Physics Letters;9/7/2009, Vol. 95 Issue 10, p103103
Academic Journal
We present a flexible electronic material fabricated by incorporating multiwall carbon nanotubes (MWNTs) into poly(dimethylsiloxane) rubber (0.35 wt % MWNT loading is most appropriate in our study). Resistance-temperature data for different composites (0.35–5 wt %) are analyzed within Coulomb gap variable range hopping model, which well explains the semiconductor behaviors in low MWNT loading composites. Field effect transistors fabricated using 0.35 wt % composite show a p-type behavior with a high effective mobility of 1.98 cm2 V s and linear transconductance 8.34×10-8 S at 2.5 V drain voltage. These results suggest an optional way of seeking for high-quality flexible electronic materials.


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